inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUV48AFI description high voltage capability high current capability fast switching speed applications designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. they are partic- ulary suited for line-operated swtchmode applications such as: switching regulators inverters solenoid and relay drivers motor controls deflection circuits absolute maximum ratings(ta=25 ) symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1000 v v cer collector-emitter voltage (r be = 10 ) 1000 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 7 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b base current-continuous 4 a i bm base current-peak 20 a p c collector power dissipation @t c =25 55 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.2 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUV48AFI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a ; i b = 0; l= 25mh 450 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat)-1 collector-emitter saturation voltage i c = 8a; i b = 1.6a 1.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 12a ;i b = 2.4a 5.0 v v be (sat) base-emitter saturation voltage i c = 8a; i b = 1.6a 1.6 v i cer collector cutoff current v ce =rated v cer ; r be = 10 v ce =rated v cer ; r be = 10 ;t c =125 0.5 4.0 ma i ces collector cutoff current v ce =rated v ces ; v be( off ) = 1.5v v ce =rated v ces ; v be( off ) = 1.5v;t c =125 0.2 2.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe dc current gain i c = 10a ; v ce = 5v 8 switching times resistive load t on turn-on time i c = 8a ;i b1 = 1.6a; v cc = 150v 1.0 s t s storage time i c = 8a ;i b1 =-i b2 = 1.6a; v cc = 150v 3.0 s t f fall time 0.8 s
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